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Wideband circuit design techniques for ultra-high data-rate wireless communication in silicon technologies / Neelanjan Sarmah from Assam, India. Wuppertal, August 2016
Inhalt
Publications
Contents
List of Figures
List of Tables
1 Introduction
1.1 Motivation towards sub-mmWave frequencies
1.2 Application scenarios towards sub-mmWave frequencies
1.2.1 High data-rate communication systems
1.2.2 FMCW RADAR systems
1.2.3 Imaging systems
1.3 sub-mmWave system implementation
1.3.1 Optical based sub-mmWave systems
1.3.2 Electronics based sub-mmWave systems
1.3.2.1 III-V semiconductor based sub-mmWave systems
1.3.2.2 Silicon based sub-mmWave systems
1.4 Scientific contribution
1.5 Thesis outline
1.6 Contribution of others
2 Circuit design considerations towards sub-mmWave frequencies
2.1 LO signal-generation towards sub-mmWave frequencies
2.1.1 High-frequency oscillator-based LO signal source
2.1.2 Frequency multiplier-based LO signal source
2.1.2.1 Even-harmonic frequency mutiplier topologies
2.1.2.2 Odd-harmonic frequency mutiplier topologies
2.1.3 Conclusion
2.2 Wideband techniques towards sub-mmWave frequencies
2.2.1 Coupled-resonators
2.2.2 Stagger frequency tuning
2.2.3 Distributed amplifiers
2.2.4 Conclusion
2.3 Power Amplifiers towards sub-mmWave frequencies
2.3.1 General PA design considerations
2.3.2 Loadline matching considerations
2.3.3 Conclusion
2.4 Power-combiner PAs towards sub-mmWave frequencies
2.4.1 Discussion on the general on-chip power combining techniques
2.4.1.1 Series power-combiners
2.4.1.2 Parallel power-combiners
2.4.2 Conclusion
3 Tx and Rx circuit building-blocks for frequencies above 200 GHz
3.1 240 GHz wideband PA
3.1.1 PA output stage design
3.1.1.1 EM-modeling considerations
3.1.1.2 Maximum device size limitations
3.1.1.3 Loadline considerations
3.1.1.4 PA output matching
3.1.2 PA drive stages and wideband interstage matching
3.1.2.1 Capacitor-coupled LC resonator based interstage matching
3.1.3 240 GHz PA characterization results
3.1.3.1 240 GHz PA small-signal characterization
3.1.3.2 240 GHz PA large-signal characterization
3.2 200-225 GHz 4:1 combiner Power Amplifier
3.2.1 Coupled microstrip-line based ZDC for 4:1 power combination
3.2.1.1 Optimization of the ZDC for efficient power combination
3.2.2 Measurement results for the 200-225 GHz combiner-PA
3.3 240 GHz wideband LO signal source
3.3.1 Impact of the LO spurious harmonics on the system performance
3.3.2 Circuit design considerations for wideband LO
3.3.2.1 Optimum device size
3.3.2.2 Interstage drive power requirements
3.3.2.3 Wideband operation
3.3.2.4 Spurious harmonics
3.3.3 240 GHz LO signal source characterization results
3.3.3.1 Absolute power measurements
3.3.3.2 Harmonic measurements
3.4 Mixers for 240 GHz quadrature Tx and Rx chipset
3.4.1 240 GHz quadrature up-conversion mixer
3.4.2 240 GHz quadrature down-conversion mixer
3.5 Conclusion
4 240 GHz fully-integrated quadrature Tx and Rx chipset
4.1 240 GHz quadrature Tx and Rx architecture
4.2 High-speed PCB design and packaging
4.3 240 GHz quadrature Tx and Rx characterization
4.3.1 On-wafer RF characterization of the 240 GHz Tx and Rx chipset
4.3.2 Free-space RF characterization of the 240 GHz Tx and Rx chipset
4.3.2.1 Antenna radiation pattern measurement
4.3.3 IF bandwidth characterization of the 240 GHz chipset
4.3.4 Conclusion
4.4 240 GHz ultra-high data-rate wireless communication
4.4.1 Link-budget and modulation scheme
4.4.2 240 GHz wireless communication data-rate measurements
4.4.2.1 Measurement results for BPSK modulation scheme
4.4.2.2 Measurement results for QPSK modulation scheme
4.4.2.3 Summary of the data-rate measurements
4.4.3 Conclusion
5 Conclusion and future outlook
5.1 Recommendations for future work
References