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Performance tests of depleted CMOS sensors for application at HL-LHC / Christian Johann Riegel. Wuppertal, 27. April 2018
Inhalt
Introduction
Standard Model and High Energy Physics experiments
The Large Hadron Collider
The ATLAS detector
The ALICE detector
Particle detection with silicon detectors
Silicon properties
The pn–junction
Interaction of ionising particles with matter
Charge collection and Segmentation
Complementary Metal-Oxide Semiconductor (CMOS) technology
Radiation damage of semiconductor sensors
Radiation damage in the bulk - NIEL damage
The NIEL hypothesis
Effects of NIEL damage
Depletion after irradiation
Radiation-induced surface damage - IEL damage
ATLAS semiconductor tracking system
The new ATLAS Inner Tracker (ITk)
Requirements
Detector technologies
Hybrid detectors
Monolithic Active Pixel Sensors (MAPS)
Depleted Monolithic Active Pixel Sensors (DMAPS)
Fill factor and pixel capacitance
Performance implication of the pixel capacitance
DMAPS optimisation
TowerJazz Investigator
ALICE ITS Upgrade
TowerJazz [180]nm technology
Investigator chip and pixel design
Modified process for enhanced depletion
ATLAS TowerJazz Investigator test setup and data analysis procedure
ATLAS TowerJazz Investigator test setup
Data analysis procedure
Robustness of fit function against noise
Noise of the external readout chain
Linearity of external readout chain
Summary
Signal characterisation of the Standard Process
Validation of the chosen working point
Correlation of deposited energy and signal size
Transfer function of the internal source follower
Linearity test using monochromatic fluorescence lines
Performance of the Standard Process before irradiation
Charge sharing and its effect on the single-pixel spectrum
Signal rise time
Sensor performance after irradiation
Irradiation campaigns at the TRIGA reactor in Ljubljana
Gain and charge collection after irradiation
Signal rise time after irradiation
Efficiency measurements – Standard Process
Testbeam results of the Standard Process after irradiation
Summary
Performance of the Modified Process
Correlation of deposited energy and signal size
Linearity test using monochromatic fluorescence lines
Performance of the Modified Process before irradiation
Signal spectra depending on pixel position
Sensor performance after irradiation
Gain and charge collection after irradiation
Signal rise time after irradiation
Hit rates depending on pixel position
Efficiency measurements – Modified Process
Testbeam results of the Modified Process after irradiation
Charge collection
Influence of the deep p-well size
Summary
Impact of the n-layer implant doping concentration
Sensor performance before irradiation
Sensor performance after irradiation
Summary
Summary and Outlook
Outlook
Bibliography
List of Abbreviations
List of Figures
List of Tables
Additional results and information