Silicon-based systems for microscopic and volumetric terahertz imaging / by Philipp Hillger from Wuppertal, Germany. Wuppertal, April 2020
Content
- Abstract
- Zusammenfassung
- Context
- Introduction
- Terahertz Imaging and Sensing
- Contrast in Terahertz Imaging
- Macroscopic Electrodynamics
- Absorption and Dispersion
- Reflection and Transmission at Material Boundaries
- Wave-Matter Interaction Phenomena in the THz Band
- Application: Breast Cancer Margin Assessment
- Spatial Resolution in Terahertz Imaging
- Review of Contemporary THz Technology
- Far-Field Imaging
- Frequency-Doubler-Based 0.43 THz Source for Active Far-Field Imaging
- 3D Terahertz Imaging Based on Computed Tomography
- Near-Field Imaging
- THz Near-Field Sensing in Silicon Technology
- Resonator-Based Sensing in Planar Technology
- Incoherent Sensing Concept
- Single-Pixel THz Near-Field Sensors
- Summary
- Modeling of Cross-Bridged Double Split-Ring Resonators
- A THz Near-Field Sensor System-on-a-Chip in SiGe-HBT Technology
- A Scalable Front-End for THz Near-Field Sensors
- A 1D Multi-Pixel Architecture
- Design of a Shielded Wilkinson Power Splitter Network
- Impact of Parasitic Cross-Coupling Effects
- Design and Implementation of the SoC
- System-on-a-Chip Architecture
- Triple-Push Illumination Source
- Power Detection Circuits
- Analog Signal Processing
- Digital Interfacing and ASIC
- SoC Reference Generation
- Sensor Module
- Experimental Characterization
- Oscillator Breakout Measurements
- Measurement of the Lateral Resolution
- Analog Read-Out
- Measurement of the Response Decay-Rate
- Measurement of Pixel Cross-Coupling
- Impact of Process Variations
- Digital Read-Out
- Imaging Experiments
- Summary and Conclusion
- Conclusion