Inhalt

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   List of Figures
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   List of Tables
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   List of Abbreviations
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   Publications
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   Contributions of Others
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   Abstract
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   Abstract
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   Zusammenfassung
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  Introduction
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   Scope of this work
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   Introduction to TFT technologies
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   Need for a-IGZO TFTs
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  A literature review of a-IGZO in RF applications
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   Between 2005 and 2010
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   Between 2011 and 2015
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   Between 2016 and 2023
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   Design challenge and research methodology
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   Application and organization
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  Transistor Fundamentals for Radio Frequency Circuit Design
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   Design requirements
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  Figure of merits for RF transistors
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   Stability
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   Power gain
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   Transit frequency
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   Maximum oscillation frequency (f_max)
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   Noise figure
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   Output power and efficiency
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   Failure parameters
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   Mean time of failure
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   Breakdown voltage
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  Mismatch and process variation
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   Causes of process variation in a-IGZO TFTs
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   Device yield
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  Designing TFTs for RF application
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  In-House fabrication of a-IGZO TFTs
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   Deposition of gate electrode
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   Formation of gate dielectrics
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   Deposition of channel material
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   Post-Deposition heat treatment
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   Self-alignment channel patterning and source drain deposition
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   Encapsulation
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   Improvement in f_T
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   Improvement in f_max
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   Maximum available gain and stability
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   Device breakdown
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   Conclusion
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  Parameter Extraction and Modeling
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   Requirement of DC and small-signal model
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   DC modeling of the transistor
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   Current equation in RPI-a TFT model
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   Extraction procedure
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   Result of DC modeling
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  RF parameters extraction techniques
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   Calibration standard based deembedding
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   Application of Calibration Standard based Deembedding
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   Limitations of Calibration Standard based Deembedding
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   Deembedding without standards
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   Geometry of a TFT
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   Two-Lumped gate model
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   Extrinsic model and parameter extraction
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   Extraction of gate ratio and deembedding of R_G1
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   Extraction of gate pad capacitance
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   Extraction of second gate resistance and drain and source resistances
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   Intrinsic model and parameter extraction
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   Intrinsic Y-parameters
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   Extraction of intrinsic capacitances
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   Extraction of transconductance and channel resistance
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   Relation between RF Model and DC Model
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   Extraction of channel delay and delay inductance
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  Implementation of the model
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   Implementation of intrinsic capacitance
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   Implementation of NQS effect
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  Model verification and scalability
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   Single-finger TFT
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   Multi-finger TFT
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   Transit and maximum oscillation frequency
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   Conclusion of TFT modeling
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  Harmonic Generation beyond f_T
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   Harmonics beyond f_T
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   Theory of frequency doubling
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   Measurement setup
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   Initial proof of concept
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   Multi-finger frequency doubler for GHz frequency
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   Number of fingers versus output
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   Results of multi-finger doubler
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   DC simulation
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   Gate voltage versus output power
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   First harmonic rejection
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   Bias stress
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   RF versus breakdown
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   Conclusion of the doubler measurement
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   Application of the model for higher output power
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   Conclusion
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  Incoherent Detection beyond f_T
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   Principle of square-law detection
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   Generation 1 detector: 2018
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   Generation 2 detector: 2022
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   Improvement in responsivity and NEP
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   Conclusion of detector measurement
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  A Coherent System: Design, Simulation and Layout
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   High-speed TFT
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  Model extraction of the high-speed TFT
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   Threshold drift in the high-speed TFT
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   Extraction of extrinsic elements
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   Model verification
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   Architecture of the OOK transmitter
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   Local oscillator
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   Buffer and modulator
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   Power amplifier
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   Doubler
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   Simulation of transmission power
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  Architecture of the OOK receiver
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   Local oscillator
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   Mixer
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   Load resistance and noise figure
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   Baseband amplification
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   Simulation of the receiver
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   Layout of the transceiver
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  Fabrication yield problem
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   Dependency on gate material
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   Dependency on architecture
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   Dependency on dielectric
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   Dependency on encapsulation
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   Conclusion of the system design
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   Conclusion and Outlook
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   Summary of results
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   Significance of the work
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   Potentials for improvement
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   Outlook
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  Distributed Model of Gate Electrode
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   RC ladder Gate electrode model
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   Y-Parameters in distributed RC gate model
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   Z-Parameters in distributed RC gate model
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   Effect of propagation constant
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  Low Frequency Noise of in-house a-IGZO TFTs
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  Types of low frequency noise
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   Origin of 1/f noise
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  Noise measurement setup
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   Noise floor of the setup
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   TFT Noise measurement results
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   1/f Noise of in-house TFT
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   Low Frequency noise of the 2022 TFTs
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   Summary of noise measurements
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  Inductor Design
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   Planar inductor on glass substrate
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   Summary of inductor design
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  TFT Model Files
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   Verilog-A model for the Cr-gate TFT
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  Model library for high-speed TFT of Chapter 6
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   Additional white noise and shot noise current source